| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain-Source Voltage (V) |
60 |
| Maximum Continuous Drain Current (A) |
0.38 |
| Maximum Absolute Continuous Drain Current (A) |
0.38 |
| Maximum Gate-Source Voltage (V) |
±20 |
| Maximum Drain-Source Resistance (mOhm) |
1600@10V |
| Typical Gate Charge @ Vgs (nC) |
0.7@4.5V |
| ID For GFS (A) |
0.2 |
| VDS For GFS (V) |
5 |
| Maximum Input Capacitance @ Vds (pF) |
45@20V |
| Breakdown Voltage Type |
DSS |
| Typical Gate Charge @ 10V (nC) |
0.7 |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
420 |
| Minimum Gate Threshold Voltage (V) |
1 |
| Category |
Small Signal |
| Typical Gate to Drain Charge (nC) |
0.1 |
| Typical Output Capacitance (pF) |
4.2 |
| Typical Gate to Source Charge (nC) |
0.3 |
| Maximum Junction Ambient Thermal Resistance (°C/W) |
417 |
| Maximum Positive Gate-Source Voltage (V) |
20 |
| Typical Input Capacitance @ Vds (pF) |
24.5@20V |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
2.2@20V |
| Typical Diode Forward Voltage (V) |
0.8 |
| Maximum Diode Forward Voltage (V) |
1.2 |
| Typical Forward Transconductance (S) |
0.53 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
5 |
| Typical Turn-On Delay Time (ns) |
12.2 |
| Typical Turn-Off Delay Time (ns) |
55.8 |
| Typical Fall Time (ns) |
29 |
| Typical Rise Time (ns) |
9 |
| Maximum Gate-Source Leakage Current (nA) |
10000 |
| Maximum Gate Threshold Voltage (V) |
2.3 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Tradename |
PowerTrench® |
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